| PALO
ALTO, CA -- (MARKET WIRE) -- 05/05/2005 -- Nanosys
announced today the issuance of U.S. Patent No.
6,882,051 (the '051 patent) entitled "Nanowires,
nanostructures and devices fabricated therefrom," by the U.S. Patent and Trademark
Office. This patent, exclusively licensed from the Regents of the University
of California, covers fundamental compositions of matter and methods for creating
novel nanowire heterostructures in which the composition changes longitudinally
along a wire's length and/or coaxially about its width. This technology covers
a broad variety of devices including Field Effect Transistors (FET), light emitting
devices including Light Emitting Diodes (LEDs) and nanolasers, solar cells,
thermoelectric devices, optical detectors, and chemical and biological sensors
Nanowire heterostructures are nanoscopic wires which
have their composition controlled along their length
and/or width to create junctions between materials
of different composition. These junctions can be
made atomically sharp and defect free, allowing for
the production of high performance electronics integrated
within each single nanostructure.
The following Scanning Electron Microscope (SEM)
image is an example of heterostructure nanowires,
a few nanometers in diameter, synthesized with alternating
segments of Silicon and Silicon Germanium.
"The technology to integrate different materials
at the nanoscale enables us to create nanostructures
that perform as devices with multiple functions rather
than just materials," said Calvin Chow, Nanosys'
Chief Executive Officer. "This significantly increases
the value of our nanostructures while simplifying
their incorporation into products."
About Nanosys
Nanosys, Inc. is a leader in the development of
nanotechnology-based products utilizing high performance
inorganic nanostructures. Nanosys has built one of
the broadest technology platforms in the industry
with more than 350 patents and patent applications
covering fundamental areas of nanotechnology, at
multiple levels, from basic nanostructures to functional
devices to end applications. Based in Palo Alto,
Calif. and privately held, Nanosys collaborates with
industry leaders including Sharp, Dupont, Intel,
Matsushita Electric Works and SAIC to develop revolutionary
high-value, high-performance products for computing,
optoelectronics, communications, energy, defense
and the life and physical sciences. Additional information
on Nanosys can be found at www.nanosysinc.com
CONTACT: Peter Garcia Chief Financial Officer Nanosys, Inc. (650) 331-2154 pgarcia@nanosysinc.com SOURCE: Nanosys
Inc.
|
