| SILVER
SPRING, MD -- (Market Wire - Aug 22, 2005) -- Technologies
and Devices International, Inc., a privately held
Maryland corporation (TDI), today announced a significant
step in the development of advanced hydride vapor
phase epitaxial (HVPE) technology for group III nitride
products by demonstrating indium nitride (InN) epitaxial
layers and structures. Novel 2-inch diameter InN-on-sapphire
templates and InN/GaN heterostructures will be featured
at the 6th International Conference on Nitride Semiconductors
in Bremen, Germany, from August 27 through September
3 this year.
Optoelectronic and electronic devices based on Group
III Nitride materials (GaN, AlN, InN) are the subject
of intense development for various applications including
solid state lighting, bio and chemical detection
systems, environmental, communication and military
equipment. The GaN-based market is projected to reach
$5B in 2007 and exceed $7B in 2009.
Dr.
Alexander Syrkin, crystal growth key specialist at
TDI, commented, "This
result is an important step towards HVPE technology
for InN-containing materials and devices including
high brightness blue, ultra violet, and white light
emitting diodes (LEDs). TDI has already demonstrated
GaN-based devices by proprietary patented HVPE technology.
New process allows us to deposit InN epitaxial layers
or 3-dimentional nano-size structures in a controllable
manner. Development of InN and InGaN materials and
structures is progressing rapidly thanks to intense
collaboration with the Army Research Laboratory and
Texas Technical University."
Dr.
Vladimir Dmitriev, President and CEO of TDI, added, "TDI
is manufacturing and supplying a variety of nitride
epitaxial products including GaN, AlGaN, and AlN template
substrates for blue and UV LEDs, and high power transistor
applications. Latest achievements in InN technology
will help us to develop future products and provide
nitride community with advanced materials and device
structures. We are very grateful to the Department
of Energy supporting this project in a frame of Solid-State
Lighting Program."
About TDI
TDI was founded in Gaithersburg, MD, in 1997 as a
new independent business. The Company is developing
and manufacturing novel compound semiconductors including
GaN, AlN, and SiC for applications in short wavelength
optoelectronics and high power/frequency electronics.
Contact for more information:
TDI, Inc.
Tel: 301-572-7834
Fax: 301-572-6435
E-mail: Email
Contact
Web site: www.tdii.com
|
