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Spintronics is a really neat phrase
- an instant buzz-word.

 
Electrons' electro magnetic properties cause an interesting effect that you depend on. Absolutely.

It's called electricity and electric current is measured by the abundance, or lack, of electrons in the ferroelectric nucleus, better known as voltage or static charge.
Ferroelectric spintronics is, in turn, the method by which electric fields and photons change the properties of ferroelectric molecules.

IBM and Stanford University say they're going to jointly research "spintronics" and that their efforts could "one day end the irritating delay people experience when they turn on their computers".

Then you'd have figure out what to do with all those seconds you'd saved.
In the meanwhile, six years ago atomic holographic DVR disc drive inventor Michael Thomas filed for patents that were granted in 2000, setting a starting point for new plasmonic physics in motion - the first in the world.

IBM and Stanford University are thinking spintronics could lead to M-RAM - magnetic random access memory - among other things.

Thomas, however, is even further ahead than that.
His idea was, and still is, to use polarized UV photons with the same resonant frequencies as the ferroelectric molecule and electric fields to control electron movement, polarity, and EMF fields for optical display imagery and data storage applications.

"I invented new phrases like photon induced electric field poling, plasmonic physics, and ferroelectric spintronics to talk about the science," Thomas told p2pnet.

And one of the potential applications is a drive with almost bottomless storage capabilities.
Now read on

Spin, spin, spin, spin

By Michael Thomas



For ferroelectric spintronics to work there needs to be dynamic current flow to cause movement of the electron which has intrinsic properties affected by electro magnetic fields, electric fields, and photon excitation.

For example, when charge carriers like electrons are accelerated (as opposed to moving at constant velocity), a fluctuating magnetic field is produced. This generates a fluctuating electric field which in turn produces another varying magnetic field.
Generating a perfect spin current by an electric field and UV photons in a high-k dipole dielectric material like a ferroelectrics molecule could then be made reversible, have non-dissipative of power, and not suffer from leakage current lost over time."
Ferroelectric molecular write activity is influenced by the introduction of ultra-violet or deep blue light according to The Einstein/Planck theorem of Energy Quantum.
An induced electrical field, along with UV photons, helps to create spin-polarized electron currents that further alter the ferroelectric molecular properties such as conductivity, intrinsic magnetic fields and intrinsic electrical properties.
Removal of the light source and induced electric field leaves the ferroelectric molecule in a non-volatile altered electrical state potential.

Niels Bohr Atom Postulates states, light excited electrons will stay in their higher energy orbits, ie, UV or deep blue light with specific frequency and quantum energy excite the electrons of ferroelectric molecules into higher valence orbits and fall back to the normal lower energy orbits when the UV or deep blue light source is removed.
The altered molecular state of the ferroelectric molecule can be 'read' by using a second deep blue or ultra-violet light source which causes electrons of the ferroelectric perovskite molecule to jump from one orbit to another, and back again.
The floating gate Mosfet transistor senses the translation of the physics of the electrostatic field (electric lines of force) from the ferroelectric molecule to voltage or data.

It's able to detect small changes in the electrical field potential of the ferroelectric molecule when ultra-violet or deep blue light source is focused on the ferroelectric perovskite molecule.

The Read Mosfet transistor is a source follower that doesn't destroy the stored electric field/voltage potential difference of the ferroelectric molecule.
The read voltage output is the recorded field strength in the ferroelectric molecule and is equal to the VCC of the floating mosfet transistor plus or minus the detected electrostatic field strength (electric lines of force) of the ferroelectric molecule.
The stored internal dipole position (remnant displacement of central atoms - remnant polarization) further amplifies any higher orbit electron electrical field potential either positive or negative depending on the dipole position in the ferroelectric molecule and the distance from the UV or deep blue integrated read/write head.

The dipole position of the central atom is always in one of two binary positions which dictates whether the ferroelectric molecule, looking from the top down, is a north south positive polarity or a south north negative polarity electric field.
Removal of the second UV light source leaves the ferroelectric molecule in its initial electrical field stored state.

More new definition of terms includes light induced positive electrical fields, normal non-induced electrical field , and light induced negative electrical fields.
The stored electrical field potential of a ferroelectric molecule can be made to represent at least four electrostatic spintronic field states equal to binary information.
Double sided disks and tapes can be produced by separating the ferroelectric molecular coating layer by a plastic, metal, glass, or ceramic substrate.
(Thursday 6th May 2004)

Courtesy of Jon Newton P2pnet.net

 

 

 

 

 

 

 



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