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CHAMPAIGN,
Ill. - By carving specks of single crystal silicon
from a bulk wafer and casting them onto sheets of
plastic, scientists at the University of Illinois
at Urbana-Champaign have demonstrated a route to ultrahigh
performance, mechanically flexible thin-film transistors.
The process could enable new applications in consumer
electronics - such as inexpensive wall-to-wall displays
and intelligent but disposable radio frequency identification
tags - and could even be used in applications that
require significant computing power.
"Conventional
silicon devices are limited by the size of the silicon
wafer, which is typically less than 12 inches in diameter,"
said John Rogers, a professor of materials science
and engineering and co-author of a paper to appear
in the June 28 issue of the journal Applied Physics
Letters. "Instead of making the wafer bigger
and costlier, we want to slice up the wafer and disperse
it in such a way that we can then place pieces where
we need them on large, low-cost substrates such as
flexible plastics."
This
approach has important advantages compared with paths
for similar devices that use organic molecules for
the semiconductor.
Single-crystal silicon has extremely good electrical
properties (roughly 1,000 times better than known
organics) and its reliability and materials properties
are well known from decades of research in silicon
microelectronics.
To
demonstrate the technique, Rogers and his colleagues
fabricated single-crystal, microstructured silicon
objects from wafers using conventional lithographic
patterning and etching processes. The processing sequence
generated objects of various shapes as small as 50
nanometers on a side. The researchers then used two
approaches for transferring the objects to substrates
to create high performance, thin-film transistors.
"In
one approach, we used procedures that exploit high-resolution
rubber stamps for transfer printing," said co-author
Ralph Nuzzo, a professor of chemistry and director
of the Frederick Seitz Materials Research Laboratory
on the U. of I. campus. "In the other approach,
the objects were dispersed in a solvent and then cast
using solution-based printing techniques."
Both
approaches can be implemented in a manufacturing environment,
and would scale nicely to large-area formats, Nuzzo
said. Separating the processing of the silicon from
the fabrication of other transistor components enables
the devices to be integrated with a wide range of
material types, including low-cost plastics.
Fabricating
circuits by continuous, high-speed printing techniques
could offer different capabilities than can be achieved
with existing silicon technologies, Rogers said. "We
can think in terms of unconventional electronics -
putting devices in places where standard silicon chips
can't go due to expense or geometry."
Not
only could huge, wall-sized displays be built at far
less cost, components could be printed on the insides
of windshields and other non-flat surfaces. While
current fabrication techniques favor flat chips, printing-based
methods remove that constraint.
"Another
aspect of low-cost electronic printing is embedding
information technology into places where it didn't
exist before,"
Nuzzo said. "By inserting electronic intelligence
into everyday items, we could exchange information
and communicate in exciting new ways."
An
example, he said, would be low-cost radio frequency
identification tags that could take the place of ordinary
product bar codes. Such tags could ease congestion
in supermarket checkout lines and help busy homemakers
maintain shopping lists.
"You
can let your imagination run wild," Nuzzo said.
"The functionality of an electronic circuit doesn't
have to be wired to a chip - it can be integrated
into the architecture itself."
In
addition to Nuzzo and Rogers, co-authors of the paper
were visiting scholar Etienne Menard, postdoctoral
researcher Dahl-Young Khang and graduate student Keon-Jae
Lee. The Defense Advanced Research Projects Agency
and the U.S. Department of Energy funded the work.
For
more news, visit the Illinois News Bureau at http://www.news.uiuc.edu
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