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EDEN
PRAIRIE, Minn.--(BUSINESS WIRE)--June 21, 2004--NVE
Corporation (Nasdaq:NVEC) announced that the U.S.
Patent and Trademark Office issued the company a patent
for an innovative type of MRAM. Patent number 6,744,086,
entitled "Current Switched Magnetoresistive Memory
Cell," was granted in June and concerns spin-momentum
magnetic memory cells. The patent also relates to
thermally-assisted spin-momentum writing.
A recent paper by researchers
from both the Center for Nanoscale Systems (CNS) at
Cornell University and NVE reported that spin momentum
produces spin orientation using less current than
present methods. The invention therefore has the potential
to significantly reduce MRAM write currents with lithographic
feature sizes of less than 100 nanometers. This could
enable MRAM cell densities comparable to those of
DRAM or Flash. The findings were based on tests of
"nanopillar" MRAM structures fabricated
by CNS using material from NVE.
MRAM
(Magnetic Random Access Memory) is a revolutionary
type of memory fabricated using nanotechnology which
uses electron spins to encode data. MRAM has been
called the "holy grail" of memory because
it has the potential to combine the speed of SRAM,
the density of DRAM, and the non-volatility of Flash.
"This
patent significantly strengthens our MRAM intellectual
property portfolio," commented NVE Founder and
Chief Technology Officer James M. Daughton, Ph.D.
"Spin momentum technology should help MRAM reach
its potential as a dense, mainstream memory technology."
NVE
is a leader in the practical commercialization of
spintronics, a nanotechnology which many experts believe
represents the next generation of microelectronics.
NVE licenses its MRAM intellectual property and sells
spintronic products including sensors and couplers
to revolutionize data sensing and transmission.
Statements
used in this press release that relate to future plans,
events, financial results or performance are forward-looking
statements that are subject to certain risks and uncertainties
including, among others, such factors as uncertainties
relating to MRAM production by our licensees, risks
relating to making commercially viable MRAMs, risks
in the enforcement of our patents, as well as the
risk factors listed from time to time in the company's
filings with the SEC, including our Annual Report
on Form 10-KSB and other reports filed with the SEC.
Contacts
NVE Corporation, Eden Prairie
Richard L. George, 952-829-9217
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