| ALBANY,
NY -- (MARKET WIRE) -- 12/20/2004 -- Researchers at
SEMATECH North have reached a significant milestone
in reducing deposition tool-generated defects in mask
blanks used for extreme ultraviolet lithography (EUVL),
bringing that technology a step closer to commercial
feasibility.
Technologists from SEMATECH,
Veeco Instruments Inc. (NASDAQ: VECO), and Asahi Glass
achieved an extremely low level of added defects in
recent work with Veeco's NEXUS system, an ion beam
deposition (IBD) low defect density (LDD) tool for
deposition of critical films. Following a two-year
effort to improve tool hardware, process parameters
and handling protocols, the technologists deposited
EUV multilayers with as few as one defect per mask
at 80 nm resolution, which translates into 0.005 defects
per square centimeter. A state-of-the-art laser-based
defect detection system was used to identify the defects.
"This is good news for
the semiconductor industry, because mask blank defect
reduction is a critical challenge for bringing EUVL
technology into commercial fabs," said David
Krick, program manager for SEMATECH North's Mask Blank
Development Center (MBDC). "To put this achievement
into perspective, imagine that a mask blank was expanded
to the size of North Dakota. A single, 80 nm defect
on that blank would be roughly the size of a basketball."
Giang Dao, SEMATECH lithography
director, called the milestone "technical payback"
for the investment in SEMATECH North, a joint five-year
program between SEMATECH and the University at Albany-State
University of New York. SEMATECH North is located
at Albany NanoTech, a global center for nanoelectronics
research and development and home to the College of
Nanoscale Science and Engineering at the University
at Albany.
"Without the vision and
support of New York's public and academic leaders
for SEMATECH North's EUVL program, accomplishments
such as this would not be possible," Dao said.
"As envisioned by Governor
George Pataki, Assembly Speaker Sheldon Silver and
Majority Leader Joseph Bruno, Albany NanoTech is establishing
itself as a major global center for cutting-edge nanoelectronics
research. Today's announcement provides further proof
that this vision has become reality," said Alain
Kaloyeros, Ph.D., President of Albany NanoTech and
Vice President and Chief Administrative Officer of
the College of Nanoscale Science and Engineering.
"EUV lithography holds tremendous promise for
maintaining the historical rate of progress of the
nanoelectronics industry," Kaloyeros added. "SEMATECH
North's progress right here at Albany validates its
position on the vanguard of EUV development."
"The R&D work at SEMATECH
North has led to important advancements for the entire
semiconductor industry, and we are pleased to be part
of this collaboration to develop technology critical
for next-generation photomasks," said Robert
Oates, vice president and general manager of Veeco's
Ion Beam Process Equipment Group. "This milestone
further validates IBD as a viable technology for EUV
photomask deposition."
An advanced form of lithography,
EUVL uses extremely short wavelength (13.5 nm) light
and reflective photomasks to image circuit patterns
onto the surface of semiconductor wafers. EUVL-produced
semiconductor chips, with features 32 nm wide or smaller,
are projected to be as much as 100 times faster and
have 1,000 times the memory capacity of today's most
powerful computer chips. The photomasks themselves
are made from unpatterned mask blanks, which must
be entirely free of defects, since any defects on
the finished mask could be transferred to the chips,
reducing their functionality or making them inoperable.
For years, SEMATECH has led
industry efforts to reduce defectivity in EUV mask
blanks in order to have those devices available for
commercial use before the end of the decade. The recent
defectivity accomplishment is seen as an encouraging
trend in the MBDC's ultimate goal, which is to enable
mask blank suppliers to develop processes that result
in defect-free mask blanks, measured at 25 nm resolution,
by 2009.
Since current metrology tools
cannot reliably detect particles below 80 nm, that
ultimate goal is much more challenging, Krick noted.
"However, we've demonstrated the best defect
reduction metrics seen to date for multilayer films
on EUV mask blanks, and we are ahead of our own aggressive
internal schedule," he said.
SEMATECH is a global semiconductor
technology development consortium that has effectively
represented the semiconductor manufacturing industry
on innovation issues since 1988. SEMATECH conducts
state-of-the-art research, and is a highly-regarded
technology partner whose goal is to promote the interests
common to all chipmakers. It has extensive experience
collaborating with equipment and materials suppliers,
as well as government and academic research centers,
to refine the tools and technology necessary to produce
future generations of chips. Additional information
may be found at www.sematech.org. SEMATECH, the SEMATECH
logo, AMRC, Advanced Materials Research Center, ATDF,
the ATDF logo, Advanced Technology Development Facility,
ISMI and International SEMATECH Manufacturing Initiative
are servicemarks of SEMATECH, Inc. All other servicemarks
and trademarks are the property of their respective
owners.
Contact:
Dan McGowan
512-356-3440
dan.mcgowan@sematech.org
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