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Nano
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Nano Onderzoek
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Spire
to Develop Terahertz Laser Technology
Spire's
compact terahertz radiation source has broad
application to instruments for defense against
terrorism, biological agent detection,
DNA structure identification and medical diagnostics.
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BEDFORD,
Mass.--(BUSINESS WIRE)--June 24, 2004--Terahertz
laser structure to be achieved using nano-engineered
gallium arsenide-based layers.
Spire Corporation (Nasdaq: SPIR) is developing nano-engineered gallium arsenide
layers for fabrication of miniature terahertz lasers under an AFOSR-funded,
$99,000 Phase I Small Business Technology Transfer Research (STTR) project.
Spire's compact terahertz radiation source has broad application to instruments
for defense against terrorism, and biological agent detection, as well as
DNA structure identification and a number of medical diagnostics. Demonstrated
success on this Phase I program can lead to a Phase II program of as much
as $500,000.
Spire's quantum cascade laser device consists of hundreds of nanometer-thick
gallium arsenide-based layers. The laser itself is to be the size of a pencil
tip and is expected to be extremely reliable and inexpensive. It will produce
terahertz radiation that occurs between the infrared and microwave regions
of the electromagnetic spectrum. This radiation is strongly absorbed by water
and tissue, but is transmitted by most other, non-metal materials, making
it possible to penetrate clothing or packaging materials, to detect hidden
weapons, explosives, or biological materials. Terahertz radiation has already
been demonstrated to be capable of revealing hidden tooth decay and early
skin cancers. It can also identify complex DNA and other molecular structures
by looking at their unique terahertz spectral signatures. Since terahertz
radiation has even lower energy than visible light, human safety issues are
not expected to be of concern.
The project involves the design of a new, gallium arsenide based nano-engineered
epitaxial wafer structure that can be cost effectively produced in large
quantities. Epitaxial wafers based on a new design, carried out in collaboration
with Professor Shun-Lien Chuang of the University of Illinois at Urbana-Champaign,
Department of Electrical and Computer Engineering, are being produced in
Spire's wholly owned subsidiary, Bandwidth Semiconductor. This Phase I contract
is expected to result in a demonstration of growth feasibility. Bandwidth
plans to offer such wafers for commercial sale. Spire also expects to receive
complementary terahertz development support from the Army and DARPA.
Roger Little, President and CEO of Spire Corporation, said, "We are
pleased to be advancing our terahertz technology, which can contribute to
the nation's defense against terrorism, and greatly broaden the diagnostic
capabilities of the biomedical community."
Spire Corporation provides products and services based upon a common technology
platform to the biomedical, solar energy and optoelectronics industries worldwide.
Certain matters described in this news release may be forward-looking statements
subject to risks and uncertainties that could cause actual results to differ
materially from those indicated in the forward-looking statements. Such risks
and uncertainties include, but are not limited to, the risk of dependence
on market growth, competition and dependence on government agencies and other
third parties for funding contract research and services, as well as other
factors described in the Company's Form 10-KSB filed with the Securities
and Exchange Commission.
Contacts
Spire Corporation Kurt Linden, 781-275-6000
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