LOS ALAMOS, N.M., June 15, 2005 -- University of California scientists working
at Los Alamos National Laboratory have developed a novel method for controlling
and measuring electron spins in semiconductor crystals of GaAs (gallium arsenide).
The work suggests an alternative--and perhaps even superior--method of spin
manipulation for future generations of "semiconductor spintronic" devices.
In research published in today's issue of the scientific journal Physical Review
Letters, Scott Crooker and Darryl Smith describe their use of a scanning optical
microscope to acquire two-dimensional images of spin-polarized electrons flowing
in semiconductor crystals mounted on an optical cryostat while using a miniature "cryogenic
vise" to apply gentle pressure. By squeezing the crystal in a controlled manner,
and without applying magnetic fields, the researchers were able to watch the
electron spins rotate (or precess) as they flow through the crystal.
According to Crooker, "electrons, in addition to their negative electronic charge,
also possess a magnetic "spin". That is, each electron behaves like a little
bar magnet, with north and south poles. Electron spins in semiconductors are
typically manipulated by applying a magnetic field, but we've found we can do
the same thing, in a controlled fashion, using the "vise". And, the resulting
degree of spatial spin coherence is remarkably more robust compared to the spin
precession induced by a magnetic field."
The cryogenic vise operates at only a few degrees above absolute zero (4 degrees
Kelvin) and can be used to intentionally tip, rotate, and flip the electron spins.
The research was conducted at the Pulsed Field Facility of the National High
Magnetic Field Laboratory (NHMFL) at Los Alamos.
The research was funded by Los Alamos Laboratory-Directed Research and Development
(LDRD) funding and the Defense Advanced Research Project Agency's SPins IN Semiconductors
(SPINS) Program, which is designed to encourage research to exploit the spin
degree of freedom of the electron and create revolutionary electronic devices
with the potential to be very fast at very low power.
Alex H. Lacerda, Director of NHMFL-Los Alamos, states, "This work is an excellent
example of how the LDRD program engenders strong inter-divisional relationships
and enduring experimental-theoretical collaborations at Los Alamos for the pursuit
of basic science."
The research fits into a broader area of expertise that Los Alamos National Laboratory
maintains in the field of atomic physics in general, and spintronics research
in particular.
Los Alamos National Laboratory is operated by the
University of California for the National Nuclear
Security Administration of the U.S. Department of
Energy and works in partnership with NNSA's Sandia
and Lawrence Livermore national laboratories to support
NNSA in its mission.
Los Alamos enhances global security by ensuring the safety and reliability
of the U.S. nuclear deterrent, developing technologies to reduce threats from
weapons of mass destruction, and solving problems related to defense, energy,
environment, infrastructure, health and national security concerns.
Contact: Todd Hanson, tahanson@lanl.gov ,
(505) 665-2085 (04-147)
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